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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) www..com Excellent current gain characteristics. Complements to 2SA1585 1 2 3 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 500 150 -55-150 Units V V V A mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency *pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat fT Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 200 290 V MHz TYP MAX UNIT V V V A A IC= 50A, IE=0 IC=1mA , IB=0 IE=50A, IC=0 VCB=30V, IE=0 VEB= 5V, IC=0 VCE=2V, IC= 0.1A IC= 2A, IB=0.1A VCE=2V, IC=0.5 A F=100MHz CLASSIFICATION OF hFE Rank Range marking Q 120-270 4115Q R 180-390 4115R S 270-560 4115S Typical characteristics 2SC4115 www..com |
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